<i id="jbfgh"></i><thead id="jbfgh"><del id="jbfgh"></del></thead>

<i id="jbfgh"></i><samp id="jbfgh"><del id="jbfgh"><track id="jbfgh"></track></del></samp>
<samp id="jbfgh"><del id="jbfgh"><track id="jbfgh"></track></del></samp>
<i id="jbfgh"></i>

    <object id="jbfgh"><option id="jbfgh"></option></object>

    <font id="jbfgh"></font>
    <object id="jbfgh"><option id="jbfgh"><big id="jbfgh"></big></option></object>

      <i id="jbfgh"></i>

      <var id="jbfgh"><rp id="jbfgh"></rp></var>

      當前位置:科學網首頁 > 基金首頁 > 應用于2.5維集成的微納尺度下超低阻硅垂直互連結構的電學、 光學與熱力學機理研究


      應用于2.5維集成的微納尺度下超低阻硅垂直互連結構的電學、 光學與熱力學機理研究

      批準號61774015 學科分類先進封裝/系統封裝 ( F040606 )
      項目負責人陳志銘 負責人職稱副教授 依托單位北京理工大學
      項目類別面上項目 研究期限2018 年 01 月 01 日 至
      2021 年 12 月 31 日
      英文主題詞TSV;2.5D integration;coaxial through-silicon via;Optical-electrical-multiplexing TSV (OEM TSV);thermo-mechanical reliability


      中文摘要 為滿足未來消費電子領域對于圖形處理和計算系統高性能、小型化和低功耗的迫切需要以及更大數據傳輸帶寬、更小功耗和更高速的芯片間通信的需求,以垂直硅通孔(TSV)為基礎的2.5維硅插入層技術,由于具有異質集成能力強、成本低、集成密度高、可靠性高等優點,正逐漸成為先進三維封裝領域的研究熱點。.本項目利用超低阻硅的導電特性和高聚物的絕緣/光學特性,旨在研究應用于2.5維集成的超低阻硅垂直互連結構在電學、光學與熱力學等多物理場中的機理問題,屬于多學科交叉的前沿領域。基于標準的MEMS工藝和超低阻硅襯底,采用理論分析、仿真建模和測試驗證相結合的方法,深入開展高性能、高密度同軸垂直互連、光電同傳復用垂直互連和三維熱-機械可靠性的研究,充分發揮其抗串擾能力強、信號完整性好、易于阻抗匹配及適用于超高速芯片間通信的特點,對于多能域三維系統級芯片集成的設計與實現具有重要的學術意義、實際應用價值和廣闊的市場前景。
      英文摘要 In order to satisfy the urgent requirements of future consumer electronics for high performance, low power and miniaturized graphic processing and parallel computing systems, as well as the needs for larger data transmission bandwidth, lower power dissipation, and higher speed chip-to-chip communication, 2.5-dimensional integration technology, also referred to as interposer technique, which is based on the through-silicon-via (TSV) technique, is proposed and has been a research hotspot in the field of advanced three-dimensional packaging due to its strong heterogeneous integration capability, high integration density, low cost, and high reliability..This project takes advantages of high conductivity of the heavily-doped ultra-low-resistivity silicon (ULRS) as well as the insulation and optical properties of polymers, and is aiming to explore the electrical, optical and thermo-mechanical mechanisms of a novel ULRS TSV for 2.5-dimensional integration applications, which is a cutting-edge research area and needs multidisciplinary cooperation. Based on the standard MEMS microfabrication technology and ULRS substrate, high performance and high density coaxial TSVs as well as optical-electrical-multiplexing TSVs (OEM TSVs) and their thermo-mechanical reliability will be investigated comprehensively by theoretical analyses, modeling, simulation, and experimental studies. The proposed ULRS interposer structures, featuring high crosstalk immunity, excellent signal integrity, good impedance matching, and suitable for ultra-high speed chip-to-chip communication, have not only academic significance in the design and implementation of multi-energy domain system-level three-dimensional chip integration, but also high value in practical applications and broad market prospects.


      序號 標題 類型 作者

      關于我們| 網站聲明| 服務條款| 聯系方式| RSS| 中國科學報社 京ICP備14006957 京公網安備110402500057號
      Copyright @ 2007- 中國科學報社 All Rights Reserved
      地址:北京市海淀區中關村南一條乙三號   電話:010-62580783